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integrating power mosfet and igbt gate drivers with 3 high-side and 3 low-side referenced output channels, irs26310djpbf 3-phase ic offers 200/350 ma drive current at up to 20 v mos gate drive capability operating up to 600 v. compatible with 3.3 v input logic, it incorporates integrated bootstrap diode and has deadtime of 290 ns. ic features negative voltage spike immunity circuitry, dc bus sensing with over-voltage protection, and zero vector braking function for pm motor drives.
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